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Semefab has over 10 years
experience in the design, development and manufacture
of Opto-ASICs. Potential customers can provide a
black box specification and our engineers will
convert this into an ASIC layout and they will
manufacture, test, package and supply the completed
device*.
Features:
• Optional filter coatings for specific
wavelength sensitivity
• Dark current cancellation as standard
• Custom processes for Discrete photodiodes
& Custom Photo-ASICs
• Clear PDIP or Black IR transmissive SOIC
packages
• Probed, inked and diced 100mm wafer
• Chip on board solutions available
Custom CMOS process:
• Incorporating photodiodes in ASIC designs
• From simple photodiodes with integrated JFET
to complex ASICs
• Hazard warning lighting applications, optical
smoke detectors, rear view mirror dimming and many
more.
Standard Opto CMOS process:
• Optimum sensitivity at 900nm
• Junction depth ~0.8 microns
• Infra-Red applications (e.g. smoke
detectors)
IR
Applications:
Semefab’s standard Opto-CMOS process is aimed
at Infra-Red applications (e.g. smoke detectors),
with the optimum sensitivity at 900nm. This is formed
by a P+ anode implanted at the surface of a N-
substate. |
