| |
Description |
MIL-STD-750
method |
Conditions |
JQR-A |
JQR-B |
|
| 1 |
Internal Visual
(Precap) Inspection |
2069
2070
2072 |
|
100% |
n/a |
|
| 2 |
High temperature
stabilisation bake |
1032 |
24 hrs min at rated
maximum storage temperature |
100% |
100% |
|
| 3 |
Temperature
Cycling |
1051 |
20 cycles at -55°C to +175°C or
max storage temp (whichever is lower)
with minimum 10 minutes dwell tim |
100% |
100% |
|
| 4 |
Constant
acceleration |
2006 |
20,000G force in Y1axis for
1 min duration (see note 2) |
100% |
100% |
|
| 7 |
Hermeticity
a) Fine
b) Gross
|
1071
1071
|
Test condition H. Max leak rate =5x10-8 atm cc/s, (5x10-7 atm cc/s for internal cavity < 0.3cc)
Condition C |
100%
100% |
100%
100% |
|
| 9 |
Interim electrical |
|
|
100% |
100% |
|
| 10 |
High temperature reverse bias
a) Bipolar
b) Power MOSFET
c) Diodes |
1039
1042
1038 |
Test Condition A
Test Condition B
Test Condition C |
100% |
100% |
|
| 11 |
Interim electrical |
|
Group A (read & record) |
100% |
100% |
|
| 12 |
Power burn-in
a) Bipolar
b) Power MOSFET
c) Diodes |
1039
1042
1038 |
Test Condition B - 160 hrs min.
Test Condition A - 160 hrs min.
Test Condition B - 96 hrs min. |
100% |
100% |
|
| 13 |
Final electrical |
|
Group A
Read & Record + Drift chck (1) |
100% |
100% |
|
Notes:
- Group A end point tests are DC functional / parametric at 25°C (subgroup 2) of QR205.
- 10000G force for devices with power rating >10 watts at Tc=25°C.
- PDA (percentage defects allowable) is 10% between steps 9 & 11 and 11& 13.
|
